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Localization of Trapping Effects in GaN HEMTs with Pulsed S-parameters and Compact Models

P. Beleniotis1, F. Schnieder2, S. Chevtchenko2, M. Rudolph1,2

Published in:

Proc. 17th European Microwave Integrated Circuits Conference (EuMIC 2022), Milan, Italy, Sep. 26-27, ISBN: 978-2-87487-070-5, pp. 149-152 (2022).


Reliable operation at high frequencies has established GaN-based electronics in the high-power and high-frequency market. Investigating the impact of trapping effects on the frequency evolution of GaN HEMTs is a crucial field for technology optimization. In this paper, we compare devices operating at different frequencies to localize the main source of trapping and a possible connection to HEMT scaling. Pulsed S-parameter and load-pull measurements, analyzed by a small- and a large-signal model, signify the great importance of passivation layers for trap-induced parasitic effects.

1 Brandenburg University of Technology Cottbus-Senftenberg (BTU), Ulrich L. Rohde Chair of RF and Microwave Techniques, Siemens-Halske-Ring 14, 03046 Cottbus, Germany
2 Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany


GaN HEMT, trapping effects, compact model, microwave

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