Localization of Trapping Effects in GaN HEMTs with Pulsed S-parameters and Compact Models
P. Beleniotis1, F. Schnieder2, S. Chevtchenko2, M. Rudolph1,2
Published in:
Proc. 17th European Microwave Integrated Circuits Conference (EuMIC 2022), Milan, Italy, Sep. 26-27, ISBN: 978-2-87487-070-5, pp. 149-152 (2022).
Abstract:
Reliable operation at high frequencies has established GaN-based electronics in the high-power and high-frequency market. Investigating the impact of trapping effects on the frequency evolution of GaN HEMTs is a crucial field for technology optimization. In this paper, we compare devices operating at different frequencies to localize the main source of trapping and a possible connection to HEMT scaling. Pulsed S-parameter and load-pull measurements, analyzed by a small- and a large-signal model, signify the great importance of passivation layers for trap-induced parasitic effects.
1 Brandenburg University of Technology Cottbus-Senftenberg (BTU), Ulrich L. Rohde Chair of RF and Microwave Techniques, Siemens-Halske-Ring 14, 03046 Cottbus, Germany
2 Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Keywords:
GaN HEMT, trapping effects, compact model, microwave
Copyright © 2022 EuMA. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the EuMA.
Full version in pdf-format.