K. Tetzner1, E. Bahat Treidel1, O. Hilt1, A. Popp2, S. Bin Anooz2, G. Wagner2, A. Thies1, K. Ickert1, H. Gargouri3, and J. Würfl1
IEEE Electron Device Lett., vol. 40, no. 9, pp. 1503-1506 (2019).
Lateral β-Ga2O3 MOSFET for power switching applications with a 1.8 kV breakdown voltage and a record power figure of merit of 155 MW/cm2 are demonstrated. Sub-µm gate length combined with gate recess was used to achieve low ON-state resistances with reasonable threshold voltages above -24 V. The combination of compensation-doped high-quality crystals, implantation-based inter-device isolation, and SiNx-passivation yielded in consistently high average breakdown field strengths of 1.8-2.2 MV/cm for gate-drain spacings between 2 and 10 µm. These values outperform the results of more established wide-bandgap device technologies, such as SiC or GaN, and the major Ga2O3 material promise — a higher breakdown strength — is well demonstrated.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 Leibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, Germany
3 SENTECH Instruments GmbH, 12489 Berlin, Germany
Ga2O3, MOSFET, power electronics, break-down, high voltage.
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