N. Badawi1, O. Hilt2, E. Bahat-Treidel2, J. Böcker1, J. Würfl2, and S. Dieckerhoff1
IEEE Trans. Ind. Appl., vol. 52, no. 6, pp. 4955-4964 (2016).
In this paper, current collapse phenomena and thermal effects in normally-off and normally-on GaN HEMTs are investigated. The experimental results show that a high-off-state voltage and high-switched drain current at high junction temperature cause an increase of the on-state resistance RDSON. Varying the switching frequency from 50 to 400 kHz, an increase of the on-state resistance is further observed for both types of GaN devices. It is evident from these experiments that the number of switching transients significantly influences the increase of the RDSON, suggesting that this increase is due to a current collapse in GaN HEMTs. A detailed comparison of the evaluated RDSON between GaN transistors and the high-speed CoolMOS-C7 transistor is presented.
1 Power Electronics Research Group, Technical University of Berlin 10623 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Dynamic RDSON, Gallium Nitride (GaN) high-electron-mobility transistor (HEMT), trapping effect.
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