Highly Efficient D-Band Fundamental Frequency Source Based on InP-DHBT Technology
M. Hossain1, N. Weimann1,2, W. Heinrich1 and V. Krozer1,3
Published in:
48th European Microwave Conference (EuMC 2018), Madrid, Spain, Sep. 25-27, pp. 1005-1008 (2018).
Abstract:
Local oscillator signal generation with low phasenoise is an important topic for future communications systems operating in D-band and beyond. This paper presents a D-band fundamental reflection-type source with high DC-to-RF efficiency and low phase-noise properties, realized using a transferred-substrate (TS) 0.8 µm InP-DHBT process. It delivers 9.5 dBm peak output power, with 2 GHz tuning range. The DC consumption is only 43.5 mW from a single 2.5 volts power supply, which corresponds to 20% peak DC-to-RF efficiency. The measured single side band (SSB) phase noise reaches -94 dBc/Hz and -115 dBc/Hz at 1 MHz and 10 MHz offset frequency, respectively. To the knowledge of the authors, this is the highest DC-to-RF efficiency reported so far in this frequency range with excellent phase noise performance and state-of-the-art output power.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), 12489 Berlin, Germany
2 University Duisburg-Essen, High Frequency Electronic Devices (BHE), 47057 Duisburg, Germany
3 Goethe University of Frankfurt am Main, 60438 Frankfurt am Main, Germany
Keywords:
InP DHBT, MMIC oscillators, millimeter wave (mm-wave) source, reflection oscillator, transferred-substrate (TS) process.
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