Fabrication of AlGaN Integrated Photonic Devices
S. Gündoğdu1,2, T. Pregnolato1,2, T. Kolbe2, S. Hagedorn2, S. Pazzagli1, M. Weyers2 and T. Schröder1,2
Published in:
Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2023), Munich, Germany, Jun. 26-30, ISBN: 979-8-3503-4599-5, ck-7-2 (2023).
Abstract:
AlGaN is a highly promising material for the next generation of integrated optics due to its wide band gap and transparency over a wide spectral range, from UV to infrared [1,2]. This material also has a relatively high electro-optic coefficient, making it ideal for fast electro-optical modulation and the fabrication of reconfigurable optical devices.
1 Department of Physics, Humboldt-Universität zu Berlin, Newtonstr. 15, 12489 Berlin, Germany
2 Ferdinand-Braun-Institut, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
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