Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm
F. Mehnke1,3, C. Kuhn1, M. Guttmann1, L. Sulmoni1, V. Montag1, J. Glaab2, T. Wernicke1, and M. Kneissl1,2
Published in:
Photonics Res., vol. 9, no. 6, pp. 1117-1123 (2021).
Abstract:
We present the growth and electro-optical characteristics of highly transparent AlGaN-based tunnel heterojunction light-emitting diodes (LEDs) emitting at 232 nm entirely grown by metalorganic vapor phase epitaxy (MOVPE). A GaN:Si interlayer was embedded into a highly Mg- and Si-doped Al0.87Ga0.13N tunnel junction to enable polarization field enhanced tunneling. The LEDs exhibit an on-wafer integrated emission power of 77 µW at 5 mA, which correlates to an external quantum efficiency (EQE) of 0.29% with 45 µW emitted through the bottom sapphire substrate and 32 µW emitted through the transparent top surface. After depositing a highly reflective aluminum reflector, a maximum emission power of 1.73 mW was achieved at 100 mA under pulsed mode operation with a maximum EQE of 0.35% as collected through the bottom substrate.
1 Institute of Solid State Physics, Technische Universität Berlin, 10623 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
3 Current address: School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
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