Efficient iron doping of HVPE GaN
J.A. Freitas Jr.a, J.C. Culbertsona, E.R. Glasera, E. Richterb, M. Weyersb, A.C. Oliveirac, V.K. Gargc
Published in:
J. Cryst. Growth, vol. 500, pp. 111-116 (2018).
Abstract:
Thick freestanding iron-doped semi-insulating GaN layers were grown by Hydride Vapor Phase Epitaxy on GaN/sapphire templates. Iron doping was achieved by using Fe57-enriched Fe2O3 reduced to elemental Fe in-situ avoiding uptake of C from organometallic sources. The morphology and crystalline quality of the films show no evidence of degradation upon iron doping. Mössbauer and spin resonance experiments demonstrate that the Fe-impurity is in the isolated Fe3+ paramagnetic state and no Fe-precipitates are formed at the highest doping levels. Low temperature photoluminescence studies are consistent with full compensation of the shallow pervasive Si and O donors.
a Naval Research Laboratory, 4555 Overlook Av. SW, Washington 20375, USA
b Ferdinand-Braun-Institute, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
c Institute of Physics, University of Brasilia, Asa Norte, 70919-970 Brasilia, DF, Brazil
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