Effect of growth temperature on performance of AlGaAs/InGaAs/GaAs QW laser diodes
F. Bugge, G. Erbert, M. Procop, I. Rechenberg, U. Zeimer, M. Weyers
Published in:
J. Electron. Mater., vol. 25, no. 2, pp. 309–312 (1996).
Abstract:
Growth and characterization results are presented for high-power laser diodes with AlGaAs cladding and waveguide layers and strained In1-xGaxAs quantum wells with 0.09 < x < 0.25 grown by metalorganic vapor phase epitaxy at different temperatures. Photoluminescence at 300 and 10K, Auger spectroscopy, and high-resolution x-ray measurements are discussed. Broad area laser diodes have been fabricated with different cavity length and threshold current densities, absorption coefficients, internal efficiencies, and degradation rates have been measured.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, Germany
2 Bundesanstalt für Materialforschung und -prüfung, Berlin, Germany
Keywords:
InGaAs laser diodes, metalorganic vapor phase epitaxy (MOVPE), strained quantum wells
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