Diode Laser Technology for Inertial Fusion Energy: Techniques for Scaling Yield and Power

P. Crump¹, P. Della Casa¹, R-S. Unger¹, D. Martin¹, A. Maaßdorf¹, K. Haberland², M. Binetti², C. Lörchner-Gerdaus², H. Rupapara², J. Boschker¹, J. Glaab¹, C. Zink¹, S. Einfeldt¹, A. Knigge¹, M. Weyers¹

Published in:

IEEE Photonics Conference (IPC 2025), Singapore, Singapore, Nov. 9-13, ISBN 979-8-3315-2559-0, TuB1.3 (2025).

Abstract:

Low €/Watt GaAs-based pump diodes are required for hyper-scale applications such as fusion. Progress in facet passivation allows 885 nm single emitters to operate reliably at 40 W/200 μm, equivalent to 1.5 kW/bar (high Watts). Further, multi-wavelength in-situ metrology connects design, MOVPE- growth and ICP-etching, for yield scaling (low €).

Keywords:

Diode laser, pump diode, inertial fusion energy, high power, high yield, facet passivation

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