Design of a GaN HEMT Power Amplifier Using Resistive Loaded Harmonic Tuning
S. Preis1,2, Z. Zhang1, Mhd.T. Arnous1
Published in:
Proc. 9th European Microwave Integrated Circuits Conf. (EuMIC 2014), Rome, Italy, Oct. 6-7, pp. 552-555 (2014).
Abstract:
The proper termination of the 2nd harmonic impedance is the basic task during the design of a harmonically tuned power amplifier. In addition to several approaches of defining fundamental and harmonic pairs with purely reactive harmonics, the harmonic components can be terminated resistive as well. This work presents a broadband GaN HEMT power amplifier with resistive 2nd harmonic termination. The measured output power of 41.1 to 42.6 dBm was achieved covering a frequency range from 2.2 to 2.7 GHz. The drain efficiency of the amplifier ranged from 66.2 to 75.2 percent. Applying a LTE signal with 10 MHz bandwidth, a linearized average efficiency of 42 % was attained.
1 Microwave Engineering Laboratory, Berlin Institute of Technology, Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
broadband amplifier, gallium nitride, harmonic tuning, HEMT, power amplifier
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