Cross Conduction of GaN HFETs in Half-Bridge Converters
J. Böcker1, C. Kuring1, O. Hilt2, J. Würfl2, S. Dieckerhoff1
Published in:
Proc. Int. Exhibition and Conf. for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe 2017), Nuremberg, Germany, May 16-18, ISBN 978-3-8007-4424-4, pp. 1378-1385 (2017).
Abstract:
Cross conduction in GaN HFETs is particularly critical due to the high dVDS/dt and small gatesource capacitances in conjunction with moderate drain-gate feed-back capacitances. Therefore, the switching speed is limited in current devices, which leads to increased losses. In this work, the turn-on peak current and increased turn-on losses due to cross conduction are investigated for two normallyoff GaN HEFTs in a half-bridge topology. It is shown that a lower turn-off gate driver voltage level reduces cross conduction and can minimize the total device losses, despite of higher dead time conduction losses.
1 Technische Universität Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Copyright © VDE Verlag GmbH Berlin, Offenbach. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the VDE Verlag GmbH.
Full version in pdf-format.