An Improved EM-Simulation Procedure to Extract Extrinsic Elements of Terahertz InP DHBTs
T.K. Johansen2,3, K. Erkelenz2, A. Wentzel2, R. Doerner2, S. Boppel2, and M. Rudolph1,2
13th German Microwave Conference (GeMiC 2020), Cottbus, Germany, Mar. 09-11, ISBN 978-3-9820397-1-8, pp. 240-243 (2020).
For accurate small-signal modeling of double heterojunction bipolar transistors (DHBT), electromagnetic (EM) simulations of the outer shell of the DHBT are used for de-embedding the external parasitic parameters. However, under different simulation setup conditions, the parasitic elements can be overestimated or underestimated. This paper presents a systematic approach to set up an EM simulation and obtain accurate parasitic elements of DHBT devices using Ansys high-frequency structure simulator (HFSS). An innovative simulation method is also introduced in order to calculate parasitic base capacitance (Cpb) and base-collector capacitance (Cpbc), which cannot be extracted accurately from "off-state" measurements. Finally, the EM simulation de-embedded small-signal model is found to provide a good fit to the measured data from 50 MHz to 150 GHz.
1 FG Hochfrequenz- und Mikrowellentechnik Ulrich-L.-Rohde Stiftungsprofessur, Brandenburgische Technische Universität Cottbus-Senftenberg, 03046 Cottbus, Germany
2 Ferdinand-Braun-Institut, Leibniz-Insitut für Höchstfrequenztechnik, 12489 Berlin, Germany
3 Technical University of Denmark, 2800 Kgs Lyngby, Denmark
double-heterojunction bipolar transistor (DHBT), electromagnetic (EM) simulation, small-signal modeling.
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