Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope
C. Trager-Cowan1, A. Alasmari1, W. Avis1, J. Bruckbauer1, P.R. Edwards1, B. Hourahine1, S. Kraeusel1, G. Kusch1, B.M. Jablon1, R. Johnston1, R.W. Martin1, R. McDermott1, G. Naresh-Kumar1, M. Nouf-Allehiani1, E. Pascal1, D. Thomson1, S. Vespucci1, K. Mingard2, P.J. Parbrook3, M.D. Smith3, J. Enslin4, F. Mehnke4, M. Kneissl4,5, C. Kuhn4, T. Wernicke4, A. Knauer5, S. Hagedorn5, S. Walde5, M. Weyers5, P.-M. Coulon6, P.A. Shields6, Y. Zhang7, L. Jiu7, Y. Gong7, R.M. Smith7, T. Wang7 and A. Winkelmann1,8
Published in:
IOP Conf. Ser.: Mater. Sci. Eng., vol. 891, pp. 012023, doi:10.1088/1757-899X/891/1/012023 (2020).
Abstract:
In this article we describe the scanning electron microscopy (SEM) techniques of electron channelling contrast imaging and electron backscatter diffraction. These techniques provide information on crystal structure, crystal misorientation, grain boundaries, strain and structural defects on length scales from tens of nanometres to tens of micrometres. Here we report on the imaging and analysis of dislocations and sub-grains in nitride semiconductor thin films (GaN and AlN) and tungsten carbide-cobalt (WC-Co) hard metals. Our aim is to illustrate the capability of these techniques for investigating structural defects in the SEM and the benefits of combining these diffraction-based imaging techniques.
1 University of Strathclyde, Department of Physics, SUPA, Glasgow G4 0NG, Great Britain
2 National Physics Laboratory, Teddington TW11 0LW, Great Britain
3 University College Cork, Tyndall National Institute, Cork T12 R5CP, Ireland
4 Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany
5 Leibniz-Institut für Höchstfrequenztechnik, Ferdinand-Braun-Institut, 12489 Berlin, Germany
6 University of Bath, Department of Electronic and Electrical Engineering, Bath BA2 7AY, Great Britain
7 University of Sheffield, Department of Electronic and Electrical Engineering, Sheffield S1 3JD, Great Britain
8 AGH - University of Science and Technology, Academic Centre for Materials and Nanotechnology (ACMiN), 30059 Krakow, Poland
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