A Compact Tri-Band GaN Voltage-Mode Class-D/S PA for Future 0.8/1.8/2.6 GHz LTE Picocell Applications
A. Wentzel, M. Martinez-Mendoza, and W. Heinrich
Published in:
Proc. 45th European Microwave Conf. (EuMC 2015), Paris, France, Sep. 7-10, pp. 1160-1163 (2015).
Abstract:
This paper presents a compact tri-band voltage-mode class-S power amplifier module suitable for the LTE frequency bands of 0.8, 1.8 and 2.6 GHz. The demonstrator uses a broadband GaN voltage-mode PA MMIC and a hybrid SMD element tri-band filter introducing transmission zeros between the pass bands for improved isolation. Applying pulse-width modulated input signals the digital PA achieves a maximum output power of 5 W at 0.8 GHz, 2.2 W at 1.8 GHz, and 1.4 W at 2.6 GHz. Peak drain efficiency is 87%, 56% and 41% for 0.8 GHz, 1.8 GHz and 2.6 GHz, respectively. PAE values of 40% and a large-signal gain of 33 dB are reached.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
Digital PA; voltage-mode PA; tri-band filters; GaN; tri-band power amplifiers; class S; class D.
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