A 330 GHz Hetero-Integrated Source in InP-on-BiCMOS Technology
M. Hossain1, N. Weimann1, M. Lisker2, C. Meliani2, B. Tillack2, V. Krozer1 and W. Heinrich1
Published in:
IEEE MTT-S Int. Microw. Symp. Dig., Phoenix, USA, May 17-22, WE2H-5 (2015).
Abstract:
This paper presents a 330 GHz heterointegrated signal source using InP-on-BiCMOS technology. It consists of a fundamental Voltage Controlled Oscillator (VCO) in 0.25 µm BiCMOS technology and a frequency quadrupler in 0.8 µm transferred substrate (TS) InP-HBT technology, which is integrated on top of the BiCMOS MMIC in a wafer-level BCB bonding process. The fundamental VCO operates at 82 GHz and the combined source delivers -12 dBm output power at 328 GHz. To the knowledge of the authors, this is the first hetero-integrated signal source in the frequency range beyond 300 GHz reported so far. It demonstrates the potential of the hetero- integration process for THz frequencies.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 IHP GmbH, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Index Terms:
InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC) oscillator, millimeter wave (mm-wave) source, terahertz, transferred-substrate process (TS).
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