A 330 GHz Active Frequency Quadrupler in InP DHBT Transferred-Substrate Technology
M. Hossain, K. Nosaeva, N. Weimann, V. Krozer and W. Heinrich
Published in:
IEEE MTT-S Int. Microw. Symp. Dig., San Francisco, USA, May 22-27, Th1C-6 (2016).
Abstract:
This paper presents a wideband 330 GHz frequency quadrupler using 0.8 µm transferred substrate (TS) InP-HBT technology. The process includes a heat-spreading diamond layer, which improves the power handling capability of the circuit. The quadrupler delivers -7 dBm output power at 325 GHz, at a DC consumption of only 40 mW, which corresponds to 0.5 % of efficiency. It achieves 90 GHz bandwidth and exhibits very low unwanted harmonics. The circuit utilizes a balanced architecture. The results demonstrate the potential of the InP TS.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Index Terms:
InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), millimeter wave (mm-wave), terahertz (THz), transferred-substrate (TS) process.
Copyright © 2016 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full version in pdf-format.