A 250 GHz Hetero-Integrated VCO with 0.7 mW Output Power in InP-on-BiCMOS Technology
M. Hossain1, N. Weimann1, B. Janke1, M. Lisker2, C. Meliani2, B. Tillack2, O. Krüger1, V. Krozer1 and W. Heinrich1
Published in:
Proc. 45th European Microwave Conf. (EuMC 2015), Paris, France, Sep. 7-10, pp. 391-394 (2015).
Abstract:
This paper presents a 250 GHz hetero-integrated VCO using InP-on-BiCMOS technology. It consists of a singleended Colpitts Voltage Controlled Oscillator (VCO) in 0.25 µm SiGe-BiCMOS technology and a common-emitter based frequency tripler in 0.8 µm transferred-substrate (TS) InP-HBT technology, which are combined using a wafer-level BCB bonding process. The VCO operates at 83 GHz and the combined circuit delivers 0.7 mW output power at 250 GHz with 2% tuning range. This result documents recent advances of the hetero integrated process towards THz frequencies.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 IHP GmbH, Frankfurt (Oder), Germany
Keywords:
InP-on-BiCMOS, frequency tripler, heterointegration, InP-DHBT, SiGe-BiCMOS, transferred-substrate (TS), voltage controlled oscillator (VCO), THz frequencies.
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