A 100 GHz Fundamental Oscillator with 25% Efficiency Based on Transferred-Substrate InP-DHBT Technology
M. Hossain, N. Weimann, V. Krozer and W. Heinrich
Published in:
Proc. 46th European Microwave Conf. (EuMC 2016), London, UK, Oct. 4-6, pp. 497-500 (2016).
Abstract:
A 96-GHz fixed-frequency fundamental oscillator with high efficiency is presented, realized using a transferred-substrate (TS) 0.8 µm InP-DHBT process. It delivers 9 dBm output power, with phase noise values of -90 dBc/Hz and -118 dBc/Hz at 1 MHz and 10 MHz offset frequency, respectively. DC consumption is only 30 mW from a 1.6 volts power supply, which corresponds to the highest overall DC-to-RF efficiency of a millimeter-wave frequency source reported to date.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Keywords:
InP DHBT, MMIC oscillators, millimeter wave (mm-wave) source, reflection oscillator, transferred-substrate (TS) process.
Copyright © 2016 EuMA. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the EuMA.
Full version in pdf-format.