A 119 GHz Bandwidth Distributed Amplifier with a ±2 ps Group Delay Variation

B. van de Ven1, T. Shivan2, X. Liu1, M. Hossain2, V. Krozer2, M. Matters-Kammerer1

Published in:

Proc. 50th European Microwave Conference (EuMC 2020), Utrecht, Netherlands, Jan. 12-14, pp. 199-202 (2021).

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Abstract:

This paper presents an analysis on the bandwidth and group delay variation of the artificial transmission line structures that are inherent to distributed amplifiers. An Indium-Phosphide (InP) distributed amplifier consisting of four buffered cascode cells is presented, which reaches a bandwidth of 119 GHz. The gain is 18.2 dB and the average in-band output 1 dB compression point is 10.9 dBm. The group delay has a variation of ±2 ps between 14 GHz and 119 GHz. To the authors knowledge this is the smallest reported group delay variation for amplifiers with a bandwidth beyond 50 GHz.

1 Department of Electrical Engineering, Eindhoven University of Technology, The Netherlands
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

Keywords:

Artificial transmission lines (ATL), Distributed amplifier (DA), Double heterojunction bipolar transistor (DHBT), Indium-Phosphide (InP), Modulator driver, Traveling wave amplifier (TWA), Wideband amplifier