Optimizing AlInP/AlGaInP laser epilayer uniformity by combining in-situ and ex-situ metrology

The combination of ex-situ wafer mapping and optical in-situ measurements during metal-organic vapor phase epitaxy (MOVPE) for laser devices constitutes a powerful method for obtaining maximum layer and die uniformity across the wafer for the production of devices such as vertical-cavity surface-emitting laser (VCSEL) or edge-emitting laser (EEL) structures, notes in-situ metrology system maker LayTec AG of Berlin, Germany.
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