Ferdinand Braun Institute uses Pyro 400 for Surface Temperature Uniformity of GaN
At the IC MOVPE XV in Lake Tahoe (23-28 May) many outstanding talks dealt with process optimization by means of optical in-situ metrology. One of them was presented by Mr. Veit Hoffmann of the Ferdinand Braun Institute Berlin (FBH).
more...
Source: Compound Semiconductor, 29.06.2010