Ferdinand Braun Institute uses Pyro 400 for surface temperature uniformity of GaN

Compound Semiconductor, 29.06.2010

At the IC MOVPE XV in Lake Tahoe (23-28 May) many outstanding talks dealt with process optimization by means of optical in-situ metrology. One of them was presented by Mr. Veit Hoffmann of the Ferdinand Braun Institute Berlin (FBH).
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Compound Semiconductor, 29.06.2010