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FBH presenting III-V electronics portfolio at European Microwave Week
/en/media-center/media-review/fbh-presenting-iii-v-electronics-portfolio-at-european-microwave-week
In a joint booth (B2200) with ‘Research Fab Microelectronics Germany’ (FMD) at European Microwave Week (EuMW 2019) in Porte de Versailles Paris, France (1-3 October), Berlin-based…
FBH reports 1.8kV-breakdown gallium oxide MOSFET with record power figure of merit
/en/media-center/media-review/fbh-reports-18kv-breakdown-gallium-oxide-mosfet-with-record-power-figure-of-merit
The Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) of Berlin, Germany has developed gallium oxide (ß-Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs)…
Leistung effizient erzeugen – bei hohen Frequenzen, hohen Spannungen und mit kurzen Schaltzeiten
/en/media-center/media-review/leistung-effizient-erzeugen-bei-hohen-frequenzen-hohen-spannungen-und-mit-kurzen-schaltzeiten
Das FBH präsentiert auf der „European Microwave Week“ (EuMW) sein Leistungsspektrum in der III/V-Elektronik: Komponenten für die Digitalisierung in der mobilen Kommunikation, für industrielle und…
Energy-efficient power electronics - gallium oxide power transistors with record values
/en/media-center/media-review/energy-efficient-power-electronics-gallium-oxide-power-transistors-with-record-values-2
(Nanowerk News) Powerful electronic components are indispensable for future communications, for the digital transformation of society and for artificial intelligence applications.
FBH To Exhibit III-V Portfolio At EuMW
/en/media-center/media-review/fbh-to-exhibit-iii-v-portfolio-at-eumw
At European Microwave Week (Paris, September 29 to October 4, 2019), Ferdinand-Braun-Institut (FBH) will present its portfolio of III-V electronics for the digitisation of mobile communications, for…
Efficient power generation – at high frequencies, high voltages and with short switching times
/en/media-center/press-releases/efficient-power-generation-at-high-frequencies-high-voltages-and-with-short-switching-times
At the "European Microwave Week" (EuMW), FBH will present its portfolio in III-V electronics: components for the digitization of mobile communications, for industrial and biomedical systems as well…
Focus on defects
/en/media-center/press-releases/focus-on-defects
For four days, scientists discussed methods for analysis of crystal imperfections at the 18th International DRIP Conference in Berlin
Lateral β-Ga2O3 MOSFET for power switching applications with a breakdown voltage of 1.8 kV
/en/research/research-news/lateral-b-ga2o3-mosfet-for-power-switching-applications-with-a-breakdown-voltage-of-18-kv
FBH and IKZ worked on the fabrication of lateral β-Ga2O3-based power transistors with enhanced device performance through combining optimized layer growth and improved process technology.
European Microwave Week 2019
/en/events/european-microwave-week-2019
Visit us at EuMW at the conference and at the joint booth of Research Fab Microelectronics Germany.
Gallium oxide power transistors said to achieve record values
/en/media-center/media-review/gallium-oxide-power-transistors-said-to-achieve-record-values
Researchers from Germany’s Ferdinand-Braun-Institut (FBH) have made a breakthrough in their development of transistors based on gallium oxide (ß-Ga2O3), achieving high breakdown voltage combined with…