WOCSDICE 2013

Current development trends in semiconductor devices were the main topic of the 37. WOCSDICE (Workshop on Compound Semiconductor Devices and Integrated Circuits). The conference, organized by the Ferdinand-Braun-Institut, was held in Warnemünde (Germany) from May 26 - 29, 2013 and attracted more than 85 participants – most of which coming from European countries, more than 20% from Asia and the USA.

The main focus of this year’s broad lecture program was on GaN-based developments for power electronics, revealing the great potential of this technology for future energy-efficient power converters. Further highlights were the sessions on THz technology and developments integrating compound semiconductors on silicon as active circuit components into highly integrated semiconductor generations, thus overcoming limitations of conventional silicon technologies. Impressive results in the field of graphene transistors, spintronic as well as optoelectronic devices completed the program. Usually, the sessions were opened by invited talks from leading scientists from all over the world. They introduced the specific topic that has then been enriched by the contributed papers.

WOCSDICE is distinguished by extensive discussions of the conference contributions, leading to a very interactive atmosphere and an intensive exchange of experiences. Thus, especially young scientists gain a quick and comprehensive overview of the diverse topics and establish international contacts easily. WOCSDICE takes place every year in a different European country, next year it is scheduled to be held in Greece.

FBH news: 06.06.2013