XRD investigations of WSiN and LaB6 Layers on GaAs
E. Nebauer
Published in:
phys. stat. sol. (b), vol. 194, no. 1, pp. 121–126 (1996).
Abstract:
The microstructures of WSiN and LaB6 thin layers (amorphous or crystalline) on GaAs substrates are studied in dependence on the deposition and annealing treatments by means of the TFXRD parallel-beam technique. From the I(2Θ) diffractograms the recrystallization behaviour of the sputtered a-WSiN and a-LaB6 layers can be especially investigated. These results are of relevance for the choice of suitable materials for diffusion barriers in contact systems.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin, Federal Republic of Germany
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