X-ray characterization of an Esaki-Tsu superlattice and transport properties
J. Grenzer1, E. Schomburg1, I. Lingott1, A.A. Ignatov1, K.F. Renk1, U. Pietsch2, U. Zeimer3, B.J. Melzer4, S. Ivanov4, S. Schaposchnikov4, P.S. Kop'ev4, D.G. Pavel'ev5 and Yu. Koschurinov5
Published in:
Semicond. Sci. Technol., vol. 13, no. 7, pp. 733–738 (1998).
Abstract:
We have studied, by x-ray scattering, structural parameters of a short-period GaAs/AlAs superlattice and related the parameters to electric transport properties. Our results, for a superlattice consisting of 100 periods of about ten GaAs and seven AlAs monolayers in turn, indicate that an interface roughness of about 0.3 nm (thickness of one monolayer) may be responsible for a remarkable reduction of the electron mobility for the transport along the superlattice axis.
1 Institut für Angewandte Physik, Universität Regensburg, Germany
2 Institut für Festkörperphysik/Strukturanalyse, Universität Potsdam, Germany
3 Ferdinand Braun Institut, Berlin-Adlershof, Germany
4 Ioffe Physico-Technical Institute, St Petersburg, Russia
5 Department of Radiophysics, Nizhny Novgorod State University, Russia
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