Thermal characterization of AlGaN/GaN HEMTs on Si and n-SiC substrates
R. Zhytnytska1, J. Böcker2, H. Just2, O. Hilt1, E. Bahat-Treidel1, S. Dieckerhoff2, J. Würfl1, and G. Tränkle1
Published in:
Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2015), Scottsdale, USA, May 18-21, pp. 155-158 (2015).
Abstract:
The thermal properties of large periphery 60 mΩ AlGaN/GaN HEMTs fabricated on Si and SiC substrates have been studied by applying pulsed Ids characterization at varying base plate temperatures and by correlating it to ANSYS simulation. At bias points being typical for power switching (linear region of I-V characteristics) the thermal properties of devices on SiC substrates show a small advantage as compared to those on Si substrates. However, if operated in the saturation region (higher value of power dissipation) at longer time pulse, GaN-on-SiC devices show a clear advantage over GaN-on-Si devices.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Technische Universität Berlin, Power Electronics Research Group
Keywords:
AlGaN/GaN HEMT, thermal characterization, Si substrate, SiC substrat.
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