The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications
E. Bahat Treidel, O. Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero and J. Würfl
Published in:
78th Device Research Conference (DRC 2020), Columbus, USA, Jun. 21-24, ISBN 978-1-7281-7047-3 (2020).
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
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