Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs
E. Bahat Treidela, O. Hilta, O. Bahat Treidelb, J. Würfla
Published in:
Microelectron. Reliab., vol. 64, pp. 556-559 (2016).
Abstract:
Enhancement-mode GaN-on-Si HFETs for power switching application are investigated under fast switching and elevated ambient temperatures conditions. The switching characteristics are used to evaluate the dynamic onstate resistance at temperatures up to 175 °C, while switching drain voltage up to 400 V. The devices show a low increase of <25% in dynamic resistance when increasing the ambient temperature up to 125 °C. However, differing from expectations, above this temperature a rapid increase of on-resistance up to 85% occurs. Such anomaly indicates the existence of thermally activated trapping processes. Trapping transients taken over a large temperature range and a wide range of off-state stressing time show that in parallel to the buffer trapping, with activation energy of 0.80 ± 0.02 eV, an additional de-trapping process with activation energy of 0.42 ± 0.05 eV occurs through increased leakage current over the temperature.
a Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
b Fugro-Roames, 53 Brandl street, Eight Mile Plains, 4113, Queensland, Australia
Keywords:
GaN-on-Si, HFET, Normally-off, Dynamic resistance, Elevated temperatures.
Copyright © 2016 Elsevier Ltd. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Elsevier Ltd.
Full version in pdf-format.