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Suppression of particle formation by gas- phase pre-reactions in (100) MOVPE-grown β- Ga2O3 films for vertical device application

T.-S. Chou1, P. Seyidov1, S. Bin Anooz1, R. Grüneberg1, M. Pietsch1, J. Rehm1, T.T.V. Tran1, K. Tetzner2, Z. Galazka1, M. Albrecht1, K. Irmscher1, A. Fiedler1, and A. Popp1

Published in:

Appl. Phys. Lett., vol. 122, no. 5, pp. 052102, doi:10.1063/5.0133589 (2023).


This work investigated the metalorganic vapor-phase epitaxy (MOVPE) of (100) β-Ga2O3 films with the aim of meeting the requirements to act as drift layers for high-power electronic devices. A height-adjustable showerhead achieving a close distance to the susceptor (1.5 cm) was demonstrated to be a critical factor in increasing the stability of the Ga wetting layer (or Ga adlayer) on the surface and reducing parasitic particles. A film thickness of up to 3 µm has been achieved while keeping the root mean square below 0.7 nm. Record carrier mobilities of 155 cm2 V-1 s-1 (2.2 µm) and 163 cm2 V-1 s-1 (3 µm) at room temperature were measured for (100) β-Ga2O3 films with carrier concentrations of 5.7 × 1016 and 7.1 × 1016 cm-3, respectively. Analysis of temperature-dependent Hall mobility and carrier concentration data revealed a low background compensating acceptor concentration of 4 × 1015 cm-3 .

1 Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany


Chemical vapor deposition, Thin films, Doping, Electronic transport, Hall effect, Epitaxy, Electronic devices, Oxides

© 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/5.0133589

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