T.-S. Chou¹, P. Seyidov¹, S. Bin Anooz¹, R. Grüneberg¹, M. Pietsch¹, J. Rehm¹, T.T.V. Tran¹, K. Tetzner², Z. Galazka¹, M. Albrecht¹, K. Irmscher¹, A. Fiedler¹, and A. Popp¹

Published in:

Appl. Phys. Lett., vol. 122, no. 5, pp. 052102, doi:10.1063/5.0133589 (2023).

Abstract:

This work investigated the metalorganic vapor-phase epitaxy (MOVPE) of (100) β-Ga₂O₃ films with the aim of meeting the requirements to act as drift layers for high-power electronic devices. A height-adjustable showerhead achieving a close distance to the susceptor (1.5 cm) was demonstrated to be a critical factor in increasing the stability of the Ga wetting layer (or Ga adlayer) on the surface and reducing parasitic particles. A film thickness of up to 3 µm has been achieved while keeping the root mean square below 0.7 nm. Record carrier mobilities of 155 cm² V^-1 s^-1 (2.2 µm) and 163 cm² V^-1 s^-1 (3 µm) at room temperature were measured for (100) β-Ga₂O₃ films with carrier concentrations of 5.7 × 10¹⁶ and 7.1 × 10¹⁶ cm^-3, respectively. Analysis of temperature-dependent Hall mobility and carrier concentration data revealed a low background compensating acceptor concentration of 4 × 10¹⁵ cm^-3 .

Topics:

Chemical vapor deposition, Thin films, Doping, Electronic transport, Hall effect, Epitaxy, Electronic devices, Oxides

© 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/5.0133589

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