C. Reich¹, M. Guttmann¹, M. Feneberg², T. Wernicke¹, F. Mehnke¹, C. Kuhn¹, J. Rass^1,3, M. Lapeyrade³, S. Einfeldt³, A. Knauer³, V. Kueller³, M. Weyers³, R. Goldhahn², and M. Kneissl^1,3

Published in:

Appl. Phys. Lett., vol. 107, no. 14, pp. 142101 (2015).

Abstract:

The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented Al_xGa_1-xN multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in Al_xGa_1-xN. Using k • p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.

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