Strong amplitude-phase coupling in submonolayer quantum dots
B. Herzog1, B. Lingnau2, M. Kolarczik1, Y. Kaptan1, D. Bimberg3, A. Maaßdorf4, U.W. Pohl3, R. Rosales3, J.-H. Schulze3, A. Strittmatter3, M. Weyers4, U. Woggon1, K. Lüdge2, and N. Owschimikow1
Published in:
Appl. Phys. Lett., vol. 109, no. 20, pp. 201102 (2016).
Abstract:
Submonolayer quantum dots promise to combine the beneficial features of zero- and two-dimensional carrier confinement. To explore their potential with respect to all-optical signal processing, we investigate the amplitude-phase coupling (a-parameter) in semiconductor optical amplifiers based on InAs/GaAs submonolayer quantum dots in ultrafast pump-probe experiments. Lateral coupling provides an efficient carrier reservoir and gives rise to a large a-parameter. Combined with a high modal gain and an ultrafast gain recovery, this makes the submonolayer quantum dots an attractive gain medium for nonlinear optical signal processing.
1 Institut für Optik und Atomare Physik, TU Berlin, Straße des 17. Juni 135, 10623 Berlin, Germany
2 Institut für Theoretische Physik, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
3 Institut für Festkörperphysik, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
4 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Key Topics:
Quantum dots, Quantum wells, Charge injection, Excited states, III-V semiconductors.
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