Stable operation of InGaAs/InGaP/AlGaAs (λ = 1020 nm) laser diodes
G. Erbert, G. Beister, F. Bugge, J. Maege, P. Ressel, J. Sebastian, K. Vogel, H. Wenzel, M. Weyers
Published in:
Electron. Lett., vol. 33, no. 9, pp. 778-779 (1997).
Abstract:
The facet degradation of InGaAs/GaAs/AlGaAs ridge waveguide (RW) laser diodes was suppressed by replacing the AlGaAs waveguide layers with a InGaP lattice matched to GaAs. The long-term behaviour of such laser diodes was tested at 40°C and 100 mW emission power over 1000 h, showing degradation rates of between 1.3 × 10-5/h and 3.6 × 10-5/h without any visible facet damage.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, Germany
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