Stability of sulfur-passivated facets of InGaAs-AlGaAs laser diodes
G. Beister, J. Maege, J. Sebastian, G. Erbert, L. Weixelbaum, M. Weyers, J. Würfl, O.P. Daga
Published in:
IEEE Photonics Technol. Lett., vol. 8, no. 9, pp. 1124-1126 (1996).
Abstract:
The facets of GaAs-AlGaAs ridge waveguide (RW) laser diodes were passivated using (NH4)2Sz. The effectiveness of this procedure was checked by electroluminescence power-voltage-current (P-V-Z) measurements that provide information on the changes in the density of surface states. Using this non-destructive method, the degradation of the passivation under ambient atmosphere has been studied. Capping with silicon nitride is found to stabilize the sulfur passivation and avoid degradation.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
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