Sputtered Iridium Gate Module for GaN HEMT with Stress Engineering and High Reliability
R. Lossy1, H. Blanck2 and J. Würfl1
Published in:
Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2014), Denver, USA, May 19-22, pp. 193-196 (2014).
Abstract:
A new gate module with iridium as a degradation resistant Schottky contact for GaN based HEMT devices is developed. Conformal deposition of Schottky and barrier metal in the gate trench provides sealing of the semiconductor. Sputtering is the enabling technology that provides low stress iridium contacts from low damage processing. Patterning of the gate contact is achieved by a subtractive method. Robustness and reliability of the devices were investigated by step-stress-test, IDQ-test, storage test and DC life-test. Results are compared to a conventional deposition method with evaporated platinum contacts.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 United Monolithic Semiconductors, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany
Keywords:
Gallium nitride, HEMT, iridium, sputtered gate
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