Solar-blind AlGaN MSM photodetectors with 24% external quantum efficiency at 0 V
M. Brendel, M. Helbling, A. Knigge, F. Brunner and M. Weyers
Published in:
Electron. Lett., vol. 51. no. 20, pp. 1598-1600 (2015).
Abstract:
By utilising an asymmetric metallisation scheme to fabricate an AlGaN-based solar-blind metal-semiconductor-metal photodetector, a zero-bias external quantum efficiency (EQE) of 24% for illumination at 240 nm wavelength from the substrate side was obtained. Moreover, an asymmetric bias-dependence of dark current and EQE is observed. The EQE saturates at about 38% in reverse direction, whereas in forward direction the presence of an internal gain mechanism is indicated.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
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