Small linewidths 76x nm DFB-laser diodes with optimized two-step epitaxial gratings
O. Brox, F. Bugge, A. Mogilatenko, E. Luvsandamdin, A. Wicht, H. Wenzel, and G. Erbert
Published in:
Proc. SPIE, vol. 9134, Photonics Europe, Brussels, Belgium, Apr. 14-17, 91340P (2014).
Abstract:
We present DFB laser diodes emitting in the 76x nm wavelengths range and focus on design and fabrication of the integrated Bragg gratings. Grating functionality is obtained with a periodically patterned GaAs0.75P0.25 layer with a thickness of 13 nm. We applied scanning transmission electron microscopy using a high angle annular dark-field detector for the analysis of the buried grating structures and for the improvement of the etching and regrowth conditions. Ridge waveguide DFB lasers with optimized gratings and production process show single mode emission with intrinsic linewidths below 10 kHz. Coated 1.5 mm long ridge waveguide DFB lasers emit stable over 5000 hours at a constant power of 100 mW.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
Diode lasers, Ridge waveguide DFB lasers, Epitaxial gratings, Grating overgrowths.
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