Small- and large-signal modeling of InP HBTs in transferred-substrate technology
T.K. Johansen1, M. Rudolph2,3, T. Jensen3, T. Kraemer3, N. Weimann3 , F. Schnieder3, V. Krozer3 and W. Heinrich3
Published in:
Int. J. Microwave Wireless Technolog., vol. 6, no. 3/4, pp. 243-251 (2014).
Abstract:
In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a direct parameter extraction methodology dedicated to III-V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies.
1 Department of Electrical Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark
2 Brandenburg University of Technology, D-03046 Cottbus, Germany
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Keywords:
Modeling; Simulation and characterization of devices and circuits; Linear and non-linear CAD Techniques
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