Simple method for examining sulphur passivation of facets in InGaAs–AlGaAs (λ=0.98µm) laser diodes
G. Beister1, J. Maege1, D. Gutsche1, G. Erbert1, J. Sebastian1, K. Vogel1, M. Weyers1, J. Würfl1, O.P. Daga2
Published in:
Appl. Phys. Lett., vol. 68, no. 18, pp. 2467 (1996).
Abstract:
The effect of (NH4)2Sx treatment of the facet of InGaAs/AlGaAs ridge waveguide (RW) laser diodes on the nonradiative current and catastrophic optical damage (COD) level is reported. Using the power–voltage–current (P–V–I) characteristics of the electroluminescence at low injection levels, changes in the density of surface states at the laser facets are described.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
2 Central Electronics Engineering Research Institute Pilani, 333031 Rajasthan, India
Copyright © 1996 American Institute of Physics. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the American Institute of Physics.
Full version in pdf-format.