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SiGe MMIC’s - on the Current State-of-the-Art

W. Heinrich

Published in:

N.K. Das, H.L. Bertoni (eds.), Directions for the Next Generation of MMIC Devices and Systems, pp. 205-208, Springer, Boston, MA, ISBN: 978-1-4899-1482-8, doi:10.1007/978-1-4899-1480-4_23 (1997).

Abstract:

In recent years, the frequency limits of SiGe Heterostructure Bipolar Transistors (HBTs) have been extended to frequencies above 50 GHz. This opens new perspectives for Si-based monolithic circuits and raises questions up to which frequency range Si MMICs can be competitive with GaAs. This paper starts with an overview on the current activities in the field of SiGe HBT MMICs. In a second part we report on recent results in the 26 GHz and 38 GHz frequency range. While there are various activities in the 2 GHz range and for digital ICs, the scope of this paper is restricted to analog monolithically integrated circuits with SiGe HBTs for frequencies beyond 10 GHz.

Ferdinand-Braun-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany

Keywords:

Passive Element, Spiral Inductor, Double Heterojunction, Microwave Symposium, East Fishkill

© 1997 Springer Science+Business Media New York

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