Shifted Excitation Raman Difference Spectroscopy using a Dual-Wavelength DBR Diode Laser at 785 nm
M. Maiwald, B. Eppich, J. Fricke, A. Ginolas, F. Bugge, A. Klehr, B. Sumpf, G. Erbert, G. Tränkle
Published in:
Proc. SPIE 9313, Photonics West, San Francisco, USA, Feb. 07-12, 93130Y (2015).
Abstract:
The application of shifted excitation Raman difference spectroscopy (SERDS) using a dual wavelength distributed Bragg reflector (DBR) diode laser at 785 nm will be presented. Both excitation wavelengths necessary for SERDS provide an optical power of more than 160 mW in continuous wave operation. Raman experiments are carried out and demonstrate the suitability of the excitation light source for SERDS. Moreover, a dual-wavelength master-oscillator power amplifier diode laser system is presented. The diode laser system reaches optical powers larger 750 mW while the spectral properties of the dual-wavelength laser remain unchanged.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
Raman spectroscopy, shifted excitation Raman difference spectroscopy, SERDS, DBR laser, diode laser, dual-wavelength diode laser, master oscillator power amplifier, MOPA, 785 nm.
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