Semi-polar (1122) -GaN templates grown on 100 mm trench-patterned r-plane sapphire
D.V. Dinh1, M. Akhter1, S. Presa1,2, G. Kozlowski1, D. O’Mahony1, P.P. Maaskant1, F. Brunner3, M. Caliebe4, M. Weyers3, F. Scholz4, B. Corbett1, and P.J. Parbrook1,2
Published in:
phys. stat. sol. (a), vol. 212, no. 10, pp. 2196-2200 (2015).
Abstract:
InGaN multiple quantum well light-emitting diodes (LEDs) were grown on chemically-mechanically polished (1122) GaN templates (up to 100mm diameter wafers) by metalorganic vapour phase epitaxy. Initial GaN overgrowth on the polished templates in nitrogen ambient maintained the polished surface. The peak emission wavelength of the LEDs varied from 445 to 550 nm. In contrast to the simultaneously grown LEDs on as-grown templates, the LEDs on polished templates have very smooth surface morphology, uniform luminescence, and higher output power.
1 Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland
2 School of Engineering, University College Cork, Cork, Ireland
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
4 Institute of Optoelectronics, Ulm University, 89069 Ulm, Germany
Keywords:
GaN templates, InGaN, luminescence, metal-organic vapour phase epitaxy, nitrides, polishing, semipolar light-emitting diodes.
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