Process optimisation of MOVPE growth by numerical modelling of transport phenomena including thermal radiation
T. Bergundea, M. Dauelsbergb, L. Kadinskib, Y. Makarovb, V.S. Yuferevc, D. Schmitzd, G. Strauchd, H. Jürgensend
Published in:
J. Cryst. Growth, vol. 180, no. 3–4, pp. 660-669, Proc. WS on Modelling in Crystal Growth, Oct. 13-16, 1996, Durbuy, Belgium (1997).
Abstract:
A global transport model for the MOVPE of III–V growth based on the finite volume solution of coupled flow, heat and mass transfer, including detailed radiative transfer, multicomponent diffusion and homogeneous and heterogeneous chemical reactions, is presented. For radiative transfer modelling, a combined approach is used of grey-diffuse view-factor based heat flux exchange between the semi-transparent reactor walls through the transparent reactor interior, and a spherical harmonics approximation for the radiative-conductive heat transfer problem in participating massive quartz elements with complex shapes. The described modelling approach is applied to the horizontal multiwafer radial flow Planetary Reactor™, validated experimentally and used for process improvements. The mutual interaction of changing radiation properties at internal solid boundaries due to semiconductor coatings and thermal behaviour in that particular MOVPE reactor is discussed.
a Ferdinand-Braun-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
b Lehrstuhl für Strömungsmechanik, Universität Erlangen-Nürnberg, Cauerstrasse 4, D-91058 Erlangen, Germany
c A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russian Federation
d Aixtron GmbH, Kackerstrasse 15–17, D-52072 Aachen, Germany
Keywords:
Numerical modelling, MOVPE of GaAs, Radiation heat transfer
Copyright © 1997 Published by Elsevier B.V.
Rightslink® by Copyright Clearance Center
Full version in pdf-format.