Power Performance of Heterointegrated InP-HBT Amplifier Chiplets on BiCMOS Carrier

M. Hossain¹, H. Yacoub¹, M. Rausch¹, C. Stölmacker¹, R. Doerner¹, M. Wietstruck², W. Heinrich¹ and V. Krozer¹

Published in:

26th International Microwave and Radar Conference (MIKON 2026), Kraków, Poland, May 18-21, ISBN 978-83-969726-7-5, pp. 1-4 (2026).

Abstract:

This paper reports on the performance of an InP chiplet heterointegration on SiGe-BiCMOS carriers for mm-wave applications. A flip-chip type of assembly with indium- based microbumps allows for seamless integration with minimal losses up to more than 300 GHz. A single-stage W-band hetero integrated power amplifier shows more than 5 dB small signal gain. A saturated output power of +13 dBm is achieved with 42 mW DC power consumption at 80 GHz, which corresponds to 17% Power Added Efficiency (PAE). The results were used to assess performance metrics and demonstrate the effectiveness of the hetero integration approach.

¹ Ferdinand-Braun-Institut (FBH), 12489 Berlin, Germany
² IHP - Leibniz-Institut für innovative Mikroelektronik, Germany

Keywords:

InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), power amplifier (PA), benzocyclobutene (BCB).

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