Passively Mode-Locked Diode Laser With Optimized Dispersion Management
J.C. Balzer1, R.H. Pilny1, B. Döpke1, A. Klehr2,G. Erbert2, G. Tränkle2, C. Brenner1, and M.R. Hofmann1
Published in:
IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, 1101008 (2015).
Abstract:
We investigate passively mode-locked diode lasers with external cavity for ultrashort pulse generation. Our strategy to achieve ultrashort pulses is to generate strongly chirped pulses with a maximized bandwidth and to compress them externally. By managing intracavity dispersion with an evolutionary algorithm, we obtain pulse widths as short as 278 fs following this approach. We analyze the bandwidth of the optimized pulses in comparison to the available net gain bandwidth of the diode laser device to derive further strategies for achieving shorter pulses.
1 Lehrstuhl für Photonik und THz-Technologie, Ruhr-Universität Bochum, D-44780 Bochum, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Index Terms:
Mode-locked laser, semiconductor lasers, ultrafast pulse generation.
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