Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE)
L. Hofmann, A. Knauer, I. Rechenberg, M. Weyers
Published in:
J. Cryst. Growth, vol. 195, no. 1-4, pp. 485-489 (1998).
Abstract:
A detailed study of the regrowth of (AlGa)As over trenches etched into (InGa)P, an important step in the fabrication of index-guided laser structures, is presented. The resulting Al concentration profile depends on the growth conditions in metalorganic vapor-phase epitaxy and on the trench orientation. While for [0 −1 1]-oriented trenches the V/III ratio strongly affects the Al profile, no influence is observed for [0 1 1]-trenches. The observed dependencies are explained from the different As coverage of the different growth facets and the resulting Ga-diffusion towards the sidewalls of the trenches.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin, Germany
Keywords:
MOVPE; Patterned growth; (AIGa)As; Composition profile
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