Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
P. Crump, M. Winterfeldt, J. Decker, M. Ekterai, J. Fricke, S. Knigge, A. Maaßdorf, G. Erbert
Published in:
Proc. SPIE 9767, Photonics West, San Francisco, USA, Feb. 13-18, 97671L (2016).
Abstract:
Progress in studies to increase the lateral brightness Blat of broad area lasers is reviewed. Blat=Pout/BPPlat is maximized by developing designs and technology for lowest lateral beam parameter product, BPPlat, at highest optical output power Pout. This can be achieved by limiting the number of guided lateral modes and by improving the beam quality of low-order lateral modes. Important effects to address include process and packaging induced wave-guiding, lateral carrier accumulation and the thermal lens profile. A careful selection of vertical design is also shown to be important, as are advanced techniques to filter out higher order modes
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
Keywords:
diode laser, broad area laser, low beam parameter product, lateral brightness, high efficiency.
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