Novel approach for E/D transistors integration in GaN HEMT technology
K.Y. Osipov1, I. Ostermay2, F. Brunner2, J. Würfl2, and G. Tränkle2
Published in:
Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2018), Austin, USA, May 7-10, pp. 3.3 (2018).
Abstract:
The purpose of this work is to introduce a novel concept for integrating enhancement mode (E-mode) and depletion mode (D-mode) AlGaN/GaN HEMTs in the same fabrication process. Unlike existing E/D integration technologies (gate recess etching, fluorine implantation etc.), the proposed technology does not involve process steps that damage the semiconductor layer and therefore more reliable devices are to be expected. The proposed technology allows control of 2DEG density under the gate region by means of external mechanical stress applied to the AlGaN barrier layer. The stress is introduced by a dedicated SiNx passivation film. E and D - mode GaN HEMTs with state of art DC performance were fabricated on the same wafer using the proposed technology. Process flow for E/D transistors fabrication is presented as well.
1 Ampleon Netherlands B.V., Halfgeleiderweg 8, 6534 AV Nijmegen, The Netherlands
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Keywords:
GaN HEMT, silicon nitride, compressive stress, E/D transistors.
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