S. Arslan¹, R.B. Swertfeger², J. Fricke¹, A. Ginolas¹, C. Stölmacker¹, H. Wenzel¹, P.A. Crump¹, S.K. Patra², R.J. Deri², M.C. Boisselle², D.L. Pope², and P.O. Leisher^2,3

Published in:

Appl. Phys. Lett., vol. 117, no. 20, pp. 203506 (2020).

Abstract:

The output power of modern 975nm GaAs-based broad area diode lasers is limited by increasing carrier and photon losses at high bias. We use experiment and one-dimensional calculations on these devices to reveal that higher current densities (and hence higher local recombination rates and higher losses) arise near the front facet due to spatial hole burning and that the non-uniformity is strongly affected by laser geometry, which is more severe for longer resonators and less severe for higher front facet reflectivity. Specifically, we use devices with a segmented p-contact to directly measure the current distribution along the resonator and compare this with laser simulation. Devices with a 6mm resonator show 29% more current at the front than back, twice as large as the 15% current non-uniformity in devices with a 3mm resonator. In contrast, increased front facet reflectivity (20% rather than 0.8%) is shown to almost halve the current non-uniformity from 29% to 18% in devices with a 6mm resonator and reduces power saturation. Although the magnitude of current non-uniformity in experiment and theory is broadly consistent, in experiment, an additional divergence is seen in current flow (and hence recombination rate) near the facets, and earlier power saturation occurs. We discuss the possible saturation mechanisms that are not included in the simulation.

Topics:

Optical field, Semiconductor lasers, Current crowding, Electro-optics, Laser theory

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